Towe's group pursues research in basic optical and quantum phenomena in materials for applications in novel photonic devices that enable a new generation of information processing systems for communication, computation, and sensing. The group is also interested in understanding new pathways and fundamental mechanisms for solar energy conversion devices. Current focus is on the use of phenomena (such as three-dimensional quantum-confinement effects in nanometer-scale structures) in the study of novel devices. Examples include: quantum-dot infrared detectors and imaging sensors, electrically-pumped photonic crystal micro-cavity lasers with quantum-dot active regions, multi-spectral solar energy conversion devices, plasmonic bio-sensors, and fluorescence bio-sensing devices.
- "Size, shape, composition, and electronic properties of InAs/GaAs quantum dots by scanning tunneling microscopy and spectroscopy," S. Gaan, G. He, R.M. Feenstra, J Walker, and E. Towe, J. Appl. Phys. 108, 114315 (2010)
- "On ternary nitride substrates for visible semiconductor light-emitters," T. K. Sharma and E. Towe, Appl. Phys. Lett. 96, 191105 (2010)
- "Electronics states of InAs/GaAs quantum dots by scanning tunneling spectroscopy," S. Gaan, Guowei He, R.M. Feenstra, J. Walker, and E. Towe, Appl. Phys. Lett. 97, 123110 (2010)
- "Application-oriented nitride substrates: The key to long-wavelength nitride lasers beyond 500 nm," T. K. Sharma and E. Towe, J. Appl. Phys. 107, 024516 (2010)
- "A method for evaluating the ground state excitonic band gaps of strained InxGa1−xN/GaN quantum wells," T. K. Sharma and E. Towe, J. Appl. Phys. 106, 104509 (2009)