The research activities of my group deal with structural and electronic properties of semiconductor materials and devices. A major tool used in the studies is the scanning tunneling microscope, which allows one to image the atomic structure of a surface and to perform spectroscopic measurements of the electronic energy levels. Many of the studies deal with semiconductor heterostructures consisting of multiple layers of different types of material, with the goal of understanding how the structure of the device (including imperfections and defects) determines its electronic properties. Growth of semiconductor heterostructures has been performed in my laboratory using molecular beam epitaxy, for GaN in particular (a semiconductor with a relatively large band gap, used for blue light-emitting devices and for microwave transistor applications).
Most recently we have focused on the study of two-dimensional (2D) materials, including graphene and hexagonal boron nitride (h-BN). We prepare these materials by growth at high temperatures, and we characterize them using both scanning tunneling microscopy and low-energy electron microscopy. The latter permits both diffraction and imaging of the surfaces, with nm-scale resolution. Additionally, spectroscopic observation of energy levels above the vacuum level is performed, which is particularly useful for these 2D materials. Heterostructures consisting of alternating layers of graphene and h-BN are being studied, because of the unique current-voltage characteristic for tunneling in such structures.
- "Atom-selective imaging of the GaAs(110) surface," R. M. Feenstra, Joseph A. Stroscio, J. Tersoff, and A. P. Fein, Phys. Rev. Lett. 58, 1192 (1987)
- "Tunneling spectroscopy of the Si(111)2 × 1 surface," R.M. Feenstra, Joseph A. Stroscio, A.P. Fein, Surface Science 181, 295 (1987)
- "Electronic Structure of the Si(111)2 × 1 Surface by Scanning-Tunneling Microscopy," Joseph A. Stroscio, R. M. Feenstra, and A. P. Fein, Phys. Rev. Lett. 57, 2579 (1986)
- "Tunneling spectroscopy of the GaAs(110) surface," R. M. Feenstra and Joseph A. Stroscio, J. Vac. Sci. Technol. B 5, 923 (1987)
- "Tunneling spectroscopy of the (110) surface of direct-gap III-V semiconductors," R. M. Feenstra, Phys. Rev. B 50, 4561 (1994)
- "Large Scale 2D/3D Hybrids based on Gallium Nitride and Transition Metal Dichalcogenides," Kehao Zhang, Bhakti Jariwala, Jun Li, Natalie Christine Briggs, Baoming Wang, Dmitry Ruzmetov, Robert A Burke, Jordan O. Lerach, Tony G Ivanov, Aman Haque, Randall M. Feenstra and J. Robinson, Nanoscale (2017)
- "Properties of synthetic epitaxial graphene/molybdenum disulfide lateral heterostructures," Shruti Subramanian, Donna Deng, Ke Xu, Nicholas Simonson, Ke Wang, Kehao Zhang, Jun Li, Randall Feenstra, Susan K. Fullerton-Shirey, Joshua A. Robinson, Available online 19 September 2017
- "Growth and electronic properties of nanolines on TiO2-terminated SrTiO3(001) surfaces," W. Yan, W. Sitaputra, M. Skowronski and R. M. Feenstra, arXiv:1709.07348
- "Characteristics of Interlayer Tunneling Field-Effect Transistors Computed by a “DFT-Bardeen” Method," Jun Li, Yifan Nie, Kyeongjae Cho, Randall M. Feenstra, Journal of Elec Materi 46, 1378 (2017)
- "Characterization of hexagonal boron nitride layers on nickel surfaces by low-energy electron microscopy," P. C. Mende, Q. Gao, A. Ismach, H. Chou, M. Widom, R. Ruoff, L. Colombo, R. M. Feenstra, Surface Science 659, 31 (2017)
- "Epitaxial graphene homogeneity and quantum Hall effect in millimeter-scale devices," Yanfei Yang, Guangjun Cheng, Patrick Mende, Irene G. Calizo, Randall M. Feenstra, Chiashain Chuang, Chieh-Wen Liu, Chieh-I Liu, George R. Jones, Angela R. Hight Walker, Randolph E. Elmquist, arXiv:1606.07720