William Stanchina

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Department of Electrical and Computer Engineering, University of Pittsburgh
Ph.D., Electrical Engineering, University of Southern California, 1978

Bill Stanchina is initiating a research program that investigates both the nano-scale potential and high temperature potential of wide bandgap heterostructure semiconductor devices and ICs. In addition to developing a fabrication capability utilizing the infrastructure available at the university, he is also establishing a device characterization laboratory for micro and nano-scale electronic devices in order to characterize their semiconductor device structure properties and to extract their equivalent circuit models.

Most Cited Publications: 
  1. "39.5-GHz static frequency divider implemented in AlInAs/GaInAs HBT technology," J. F. Jensen, M. Hafizi, W. E. Stanchina, R. A. Metzger and D. B. Rensch, GaAs IC Symposium Technical Digest, Miami Beach, FL, USA, 101 (1992)
  2. "100+ GHz static divide-by-2 circuit in InP-DHBT technology," M. Mokhtari, C. Fields, R. D. Rajavel, M. Sokolich, J. F. Jensen and W. E. StanchinaIEEE Journal of Solid-State Circuits 38, 1540 (2003)
  3. "An InP-based HBT fab for high-speed digital, analog, mixed-signal, and optoelectronic ICs," WE Stanchina, JF Jensen, RH Walden, M Hafizi, H-C Sun, T Liu, C Raghavan, KE Elliott, M Kardos, AE Schmitz, YK Brown, ME Montes, M Yung, IEEE Gallium Arsenide Integrated Circuit Symposium 17th Annual Technical Digest, San Diego, CA, USA, 31 (1995)
  4. "InP-HBT chip-set for 40-Gb/s fiber optical communication systems operational at 3 V," M. Mokhtari; T. Swahn; R.H. Walden; W.E. Stanchina; M. Kardos; T. Juhola; G. Schuppener; H. Tenhunen; T. Lewin, IEEE Journal of Solid-State Circuits 32, 1371 (1997)
  5. "Effects of semiconducting and metallic single-walled carbon nanotubes on performance of bulk heterojunction organic solar cells," L Liu, W E Stanchina, G Li, Applied Physics Letter 94, 161 (2009)
Recent Publications: 
  1. "Analytical and experimental optimization of external gate resistance for safe rapid turn on of normally off GaN HFETs," Ansel Barchowsky, Joseph P. Kozak, Michael R. Hontz, William E. Stanchina, Gregory F. Reed, Zhi-Hong Mao, Raghav Khanna, IEEE Applied Power Electronics Conference and Exposition (APEC), Tampa, FL, 1958 (2017)
  2. "Design and manufacturability of a high power density M2C inverter," Joseph P Kozak, Ansel Barchowsky, Brandon Grainger, Chance Turner, Richard Delancey, Gregory Reed, William StanchinaInternational Symposium on 3D Power Electronics Integration and Manufacturing (3D-PEIM), Raleigh, NC, 1 (2016)
  3. "A Linear Model for Characterizing Transient Behaviour in Wide Bandgap Semiconductor-based Switching Circuits," Raghav Khanna, Ansel Barchowsky, Andrew A. Amrhein, William E. Stanchina, Gregory F. Reed, Zhi-Hong Mao, International Journal of Automation and Power Engineering 5, 1 (2016)
  4. "Modeling and characterization of a 300 V GaN based boost converter with 96% efficiency at 1 MHz," Raghav Khanna, Brian Hughes, William Stanchina, Rongming Chu, Karim Boutros, Gregory Reed, IEEE Energy Conversion Congress and Exposition (ECCE), Pittsburgh, PA, 92 (2014)
  5. "Negative charging effect of traps on the gate leakage current of an AlGaN/GaN HEMT," J. J. Kim, J. H. Lim, J. W. Yang, W. StanchinaJournal of the Korean Physical Society 65, 421 (2014)

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