Phase-Change Photonics for All-Optical Memory and Computation
Phase-change materials have been used commercially as an optical storage medium in the last few decades owing to their high optical contrast and long-term stability, but only recently has a fully integrated photonic device been demonstrated. This approach not only enables all-optical memory on-chip, but also allows multilevel data storage with improved SNR, low switching energy, and high speed operation. In this talk, an overview of integrated, non-volatile photonic memory based on the phase-change material Ge2Sb2Te5 (GST) will be presented, together with new innovations in the design and operation of these memory cells. The application of these memory elements for photonic “in-memory” computation will also be discussed, demonstrating the potential for novel, all-optical computing architectures based on non-volatile photonic memory cells.