Modern electronic devices and circuits are intricately complex structures consisting of semiconductors, metals, and dielectrics and the interfaces between them. Their performance and reliability sensitively depends not only on the design and materials selection but also the processing techniques used. Professor Skowronski's research covers a wide range of issues in this technology including: crystal growth of semiconductors; deposition of thin films of metals, semiconductors, and dielectrics; characterization of processing-induced defects; and degradation phenomena in electronic devices. The unifying theme of his research is the relationship between process conditions and device performance. Prof. Skowronski's research projects attempt to balance two distinctly different goals: the demonstration of novel approaches to processing of materials and the development of fundamental understanding of materials and devices.
The overarching goal for the group's research is the development and discovery the materials, phenomena, and devices for energy efficient computing. Within this field the currently active projects focus on:
(i) synthesis of novel electronic materials such as binary and complex oxides, amorphous chalcogenide alloys and 2D materials.
(ii) imaging of processes in electronic devices under bias
(iii) design, fabrication, testing and simulation of electronic devices for applications as memory cells, selection devices, and oscillators
- "Determination of wurtzite GaN lattice polarity based on surface reconstruction," A. R. Smith and R. M. Feenstra, D. W. Greve, M.-S. Shin, and M. Skowronski, J. Neugebauer J. E. Northrup, Appl. Phys. Lett. 72, 2114 (1998)
- "Microstructural characterization of α‐GaN films grown on sapphire by organometallic vapor phase epitaxy," W Qian, M Skowronski, M De Graef, K Doverspike, LB Rowland, DK Gaskill, Appl. Phys. Lett. 66, 1252 (1995)
- "Degradation of hexagonal silicon-carbide-based bipolar devices," M. Skowronski and S. Ha, Journal of Applied Physics 99, 011101 (2006)
- "Reconstructions of GaN(0001) and (0001̄) surfaces: Ga-rich metallic structures," A. R. Smith and R. M. Feenstra D. W. Greve M. S. Shin and M. Skowronski, J. Neugebauer J. E. Northrup, Journal of Vacuum Science & Technology B 16, 2242 (1998)
- "Open-core screw dislocations in GaN epilayers observed by scanning force microscopy and high-resolution transmission electron microscopy," W. Qian, G. S. Rohrer, M. Skowronski, K. Doverspike, L. B. Rowland, and D. K. Gaskill, Appl. Phys. Lett. 67, 2284 (1995)
- "Intrinsic current overshoot during thermal-runaway threshold switching events in TaOx devices," JM Goodwill and M Skowronski. Journal of Applied Physics 123.3 (2019)
- "Quantification of Compositional Runaway during Electroformation in TaOx Resistaive Switching Devices," Y Ma, J Goodwill, and M Skowronski. IEEE 11th International Memory Workshop (2019)
- "Thermal-gradient-driven elemental segregation in Ge2Sb2Te5 phase change memory cells," P Yeoh, Y Ma, DA Cullen, JA Bain, and M Skowronski. Applied Physics Letters 114.16 (2019)
- "Spontaneous current constriction in threshold switching devices," JM Goodwill, G Ramer, D Li, BD Hoskins, G Pavlidis, JJ McClelland, A Centrone, JA Bain, and M Skowronski. Nature Communications 10.1 (2019)
- "Stable Metallic Enrichment in Conductive Filaments in TaOx-Based Resistive Switches Arising from Competing Diffusive Fluxes," Y Ma, JM Goodwill, D Li, DA Cullen, JD Poplawsky, KL More, JA Bain, and M Skowronski. Advanced Electronic Materials (2019)