Modern electronic devices and circuits are intricately complex structures consisting of semiconductors, metals, and dielectrics and the interfaces between them. Their performance and reliability sensitively depends not only on the design and materials selection but also the processing techniques used. Professor Skowronski's research covers a wide range of issues in this technology including: crystal growth of semiconductors; deposition of thin films of metals, semiconductors, and dielectrics; characterization of processing-induced defects; and degradation phenomena in electronic devices. The unifying theme of his research is the relationship between process conditions and device performance. Prof. Skowronski's research projects attempt to balance two distinctly different goals: the demonstration of novel approaches to processing of materials and the development of fundamental understanding of materials and devices.
The overarching goal for the group's research is the development and discovery the materials, phenomena, and devices for energy efficient computing. Within this field the currently active projects focus on:
(i) synthesis of novel electronic materials such as binary and complex oxides, amorphous chalcogenide alloys and 2D materials.
(ii) imaging of processes in electronic devices under bias
(iii) design, fabrication, testing and simulation of electronic devices for applications as memory cells, selection devices, and oscillators
- "Determination of wurtzite GaN lattice polarity based on surface reconstruction," A. R. Smith and R. M. Feenstra, D. W. Greve, M.-S. Shin, and M. Skowronski, J. Neugebauer J. E. Northrup, Appl. Phys. Lett. 72, 2114 (1998)
- "Degradation of hexagonal silicon-carbide-based bipolar devices," M. Skowronski and S. Ha, Journal of Applied Physics 99, 011101 (2006)
- "Microstructural characterization of α‐GaN films grown on sapphire by organometallic vapor phase epitaxy," W Qian, M Skowronski, M De Graef, K Doverspike, LB Rowland, DK Gaskill, Appl. Phys. Lett. 66, 1252 (1995)
- "Reconstructions of GaN(0001) and (0001̄) surfaces: Ga-rich metallic structures," A. R. Smith and R. M. Feenstra D. W. Greve M. S. Shin and M. Skowronski, J. Neugebauer J. E. Northrup, Journal of Vacuum Science & Technology B 16, 2242 (1998)
- "Open-core screw dislocations in GaN epilayers observed by scanning force microscopy and high-resolution transmission electron microscopy," W. Qian, G. S. Rohrer, M. Skowronski, K. Doverspike, L. B. Rowland, and D. K. Gaskill, Appl. Phys. Lett. 67, 2284 (1995)
- "Formation of the Conducting Filament in TaOx Resistive Switching Devices by Thermal-Gradient-Induced Cation Accumulation," Yuanzhi Ma, Dasheng Li, Andrew A. Herzing, David A. Cullen, Brian T Sneed, Karren L More, Noel T. Nuhfer, James A. Bain, and Marek Skowronski, ACS Appl. Mater. Interfaces (2018).
- "Switching dynamics of TaOx-based threshold switching devices," Jonathan M. Goodwill, Darshil K. Gala, James A. Bain, and Marek Skowronski,JOURNAL OF APPLIED PHYSICS 123, 115105 (2018)
- "Growth and electronic properties of nanolines on TiO2-terminated SrTiO3(001) surfaces," W. Yan,1 W. Sitaputra, M. Skowronski and R. M. Feenstra, arXive.109.07348
- "Scaling behavior of oxide-based electrothermal threshold switching devices," Dasheng Li , Jonathan M. Goodwill, James A. Bain and Marek Skowronski, Nanoscale 9, 14139 (2017)
- "ON-state evolution in lateral and vertical VO2 threshold switching devices," Dasheng Li, Abhishek A Sharma, Nikhil Shukla, Hanjong Paik, Jonathan M Goodwill, Suman Datta, Darrell G Schlom, James A Bain and Marek kowronski, Nanotechnology 28, 405201 (2017)