The mission of the Nanoionics and Electronics Laboratory, led by Susan Fullerton, is to establish a fundamental understanding of ion-electron transport at the molecular level, and use this knowledge to design next-generation electronic devices at the limit of scaling for memory, logic, and energy storage.
Her research focuses on the development of materials for low-power electronics and next-generation batteries. She is a co-PI in the Center for Low Energy Systems Technology ( LEAST ), one of six STARnet centers funded by the semiconductor research corporation (SRC) and DARPA. The goal of the center is to develop low-power transistors and memory using 2D materials that are only one atom or molecule thick. Fullerton uses polymer electrolytes to enable the exploration of new regimes of transport in the 2D materials, with the goal of developing a transistor with an operating voltage lower than traditional CMOS.
Fullerton also uses electrolytes for the development of a 2D flash memory that would shrink memory to the ultimate limit of scaling. Her work on this project is funded by the NSF through their GOALI program: Grant Opportunities of Academic Liaison with Industry. The industrial partner is Micron Technology, Inc. - a global leader in memory technology. Fullerton and her co-PI, Alan Seabaugh (U. of Notre Dame), combine their expertise in polymer physics and device physics, respectively, using ion transport to control electron transport in graphene - a single layer of carbon atoms.
- "Effect of LiClO4 on the Structure and Mobility of PEO-Based Solid Polymer Electrolytes," Susan K. Fullerton-Shirey and Janna K. Maranas, Macromolecules 42, 2142 (2009)
- "2D materials advances: from large scale synthesis and controlled heterostructures to improved characterization techniques, defects and applications," Zhong Lin, Amber McCreary, Natalie Briggs, Shruti Subramanian, Kehao Zhang, Yifan Sun, Xufan Li, Nicholas J Borys , Hongtao Yuan, Susan K Fullerton-Shirey et al., 2D Mater. 3 042001 (2016)
- "Reconfigurable Ion Gating of 2H-MoTe2 Field-Effect Transistors Using Poly(ethylene oxide)-CsClO4 Solid Polymer Electrolyte," Huilong Xu, Sara Fathipour, Erich W. Kinder, Alan C. Seabaugh, and Susan K. Fullerton-Shirey, ACS Nano 9, 4900 (2015)
- "Structure and Mobility of PEO/LiClO4 Solid Polymer Electrolytes Filled with Al2O3 Nanoparticles," Susan K. Fullerton-Shirey and Janna K. Maranas, J. Phys. Chem. C 114, 9196 (2010)
- "Scanning Tunneling Microscopy and Spectroscopy of Air Exposure Effects on Molecular Beam Epitaxy Grown WSe2 Monolayers and Bilayers." Jun Hong Park, Suresh Vishwanath, Xinyu Liu, Huawei Zhou, Sarah M Eichfeld, Susan K Fullerton-Shirey, Joshua A Robinson, Randall M Feenstra, Jacek Furdyna, Debdeep Jena, Huili Grace Xing, and Andrew C Kummel, ACS nano 10.4 (2016)
- Impact of Post‐Lithography Polymer Residue on the Electrical Characteristics of MoS2 and WSe2 Field Effect Transistors J Liang, K Xu, B Toncini, B Bersch, B Jariwala, YC Lin, J Robinson, ...Advanced Materials Interfaces 6 (3), 1801321 (2019)
- "Pulse Dynamics of Electric Double Layer Formation on All-Solid-State Graphene Field-Effect Transistors." Xu, Ke, Md Mahbubul Islam, David M. Guzman, Alan Seaubaugh, Alejandro Strachan, and Susan K. Fullerton-Shirey. ACS applied materials & interfaces (2018).
- "Considerations for utilizing sodium chloride in epitaxial molybdenum disulfide." Zhang, Kehao, Brian M. Bersch, Fu Zhang, Natalie Briggs, Shruti Subramanian, Ke Xu, Mikhail Chubarov et al. ACS applied materials & interfaces(2018).
- "Direct-Write Formation and Dissolution of Silver Nanoﬁlamentsin Ionic Liquid-Polymer Electrolyte Composites," Zhongmou Chao, Brian P. Radka, Ke Xu, Garrison M. Crouch, Donghoon Han, David B. Go, Paul W. Bohn, and Susan K. Fullerton-Shirey,Small,1802023 (2018)
- "Sodium chloride induced heterogeneities in epitaxial MoS2," Kehao Zhang, Brian M. Bersch, Fu Zhang, Natalie C. Briggs, Shruti Subramanian, Ke Xu, Mikhail Chubarov, Ke Wang, Jordan Lerach, Joan M. Redwing, Susan K. Fullerton-Shirey, Mauricio Terrones, Joshua A. Robinson, arXiv:1805.12264v1 (2018)