Bill Stanchina is initiating a research program that investigates both the nano-scale potential and high temperature potential of wide bandgap heterostructure semiconductor devices and ICs. In addition to developing a fabrication capability utilizing the infrastructure available at the university, he is also establishing a device characterization laboratory for micro and nano-scale electronic devices in order to characterize their semiconductor device structure properties and to extract their equivalent circuit models.
- "Effects of semiconducting and metallic single-walled carbon nanotubes on performance of bulk heterojunction organic solar cells," Liming Liu, William E. Stanchina, Guangyong Li, Applied Physics Letters 94, no. 23 (2009): 161.
- "Maximum power point tracking using model reference adaptive control," R Khanna, Q Zhang, Gregory Reed, Z Mao, W E Stanchina, Applied Physics Letter 94, 161 (2009)
- "InP-HBT chip-set for 40-Gb/s fiber optical communication systems operational at 3 V," Mokhtari, M., Swahn, T., Wlden, R.H., Stanchina, W.E. ,(...). IEEE Journal of Solid-State Circuits 32(9), 1371-1382 (1997)
- "High-grain transimpedance amplifier in InP-based HBT technology for the reciever in 40-Gb/s optical fiber TDM links," Müllrich, J., Thurner, H., Müllner, E., Stanchina, W.E., (...). IEEE Journal of Solid-State Circuits 35(9), 1260-1265 (2000)
- "Simulation and Design of InAlAs/InGaAs pnp Herterojunction Bipolar Transisotors," Datta, S., SHi, S., Roenker, K.P., Cahay, M.M., Stanchina, W.E. IEEE Transactions on Electron Devices 45(8), 1634-1643 (1998)
- "Nanofabrication of β-Ga2O3 nanowires for device implementation," John R. Erickson, Susheng Tan, William E. Stanchina, Nanotechnology (IEEE-NANO), 2017 IEEE 17th International Conference
- "Analytical and experimental optimization of external gate resistance for safe rapid turn on of normally off GaN HFETs," Ansel Barchowsky, Joseph P. Kozak, Michael R. Hontz, William E. Stanchina, Gregory F. Reed, Zhi-Hong Mao, Raghav Khanna, IEEE Applied Power Electronics Conference and Exposition (APEC), Tampa, FL, 1958 (2017)
- "Design and manufacturability of a high power density M2C inverter," Joseph P Kozak, Ansel Barchowsky, Brandon Grainger, Chance Turner, Richard Delancey, Gregory Reed, William Stanchina, International Symposium on 3D Power Electronics Integration and Manufacturing (3D-PEIM), Raleigh, NC, 1 (2016)
- "A Linear Model for Characterizing Transient Behaviour in Wide Bandgap Semiconductor-based Switching Circuits," Raghav Khanna, Ansel Barchowsky, Andrew A. Amrhein, William E. Stanchina, Gregory F. Reed, Zhi-Hong Mao, International Journal of Automation and Power Engineering 5, 1 (2016)
- "Modeling and characterization of a 300 V GaN based boost converter with 96% efficiency at 1 MHz," Raghav Khanna, Brian Hughes, William Stanchina, Rongming Chu, Karim Boutros, Gregory Reed, IEEE Energy Conversion Congress and Exposition (ECCE), Pittsburgh, PA, 92 (2014)