New Technique Could Enable Next Generation Nanoelectronics
Silicone, it’s time to move aside. The future of electronics is approaching, and it is going to need new classes of advanced materials. One of these classes is complex oxide heterostructures, in which extremely thin films are layered on top of one another to produce exciting properties such as superconductivity and magnetism.
One standout heterostructure is lanthanum aluminate and strontium titanate, or LaAlO3/SrTiO3, which allows researchers to sketch conductive patterns on the interface with an atomic force microscope when layered. However, until now, LAO/STO has been synthesized as a relatively thick crystal slab, making it difficult to use in electronics or with other heterostructures.
A team of researchers including Jeremy Levy, Patrick Irvin, Muqing Yu, and Dengyu Yang recently developed a new method for producing extremely thin, free-standing LAO/STO membranes, which can be integrated into other heterostructures and even into silicon-based nanoelectronics. Their research can be found in Science Advances.
This new technique will open many new possibilities from stacking LAO/STO films with other materials like graphene to integrating them with quantum computers. It will enable new technologies through materials advances and bring together major themes in material science, nanoscience and quantum information.