Tevis Jacobs and his collaborators from IBM and SwissLitho were achieved sub-10 nanometer feature size in Silicon using thermal scanning probe lithography. In this work, they the t-SPL parameters that influence high-resolution patterning on the transfer stack and demonstrate that sub-15 nm half-pitch resolution patterning and transfer by t-SPL are feasible. They found that the resolution in t-SPL is limited by the extent of the plastic zone in thermo-mechanical indentation on the pattern transfer stack because, at temperatures approaching the resist’s decomposition temperature, the line shape widens, reducing the achievable resolution. They achieved reliable transfer of patterned dense lines down to 14 nm half-pitch and in the best case 11 nm half-pitch. Furthermore, evidently they showed that an enhanced resolution below 10 nm half-pitch might be possible on a mechanically different transfer stack.