2D materials

Understanding the Link Between Photonic and Electronic Performance of 2D Semiconducting Layers

  • By Burcu Ozden
  • 20 December 2017

Susan Fullerton and her colleagues wrote a scientific report on deconvoluting the photonic and electronic response of two-dimensional (2D) materials for the case of molybdenum disulfide (MoS2). What are the main criteria which provide evidence that the material is “high quality”? Are the photonic properties or electronic performance? Susan Fullerton and her colleagues have studied the MoS2 materials and their devices to answer this question and to find the correlation between electronic and optical properties in 2D materials. In their study, they used Raman, photoluminescence (PL), time-resolved photoluminescence (TRPL), high-resolution scanning transmission electron microscopy (HR-STEM), X-ray photoelectron spectroscopy (XPS), field effect transistors (FET) fabrication electrolyte gate application methods to characterize MoS2.

From 3D to 2D and Back Again

Speaker(s): 
Cory Dean
Dates: 
Monday, September 18, 2017 - 4:30pm to 5:30pm

Graphene, a single layer of carbon atoms arranged in a hexagonal lattice, is probably the best known, and most extensively characterized two-dimensional material.  However, this represents just one of a larger class of van der Waals materials, in which atomic monolayers can be mechanically isolated from the bulk.  By integrating these materials with one another,  an exciting new opportunity has emerged in which layered heterostuctures can be fabricated with properties beyond those of the constituent materials. In this talk I will present some of our recent efforts where...

Quantum Phases and Phase Transitions in Two-Dimensional Highly Correlated Metals at Oxide Interfaces

Speaker(s): 
Ramesh Budhani
Dates: 
Thursday, April 20, 2017 - 4:00pm to 5:00pm

The two-dimensional diffusive metal stabilized at the interface of SrTiO3 and the Mott Insulator perovskite LaTiO3[1-2] has challenged many notions related to the formation and electronic behavior of the two-dimensional electron gas (2DEG) at the well studies LaAlO3-SrTiO3 interface. Here we discuss specifically the stability of the superconducting phase[3] at LaTiO3 – SrTiO3 interface, the nature of the superconductor – normal metal quantum phase transition (T=0 limit) driven by magnetic field, significance of the field vis-à-vis the Chandrasekhar - Clogston limit for...

Paper and Circuits, Only Atoms Thick

Speaker(s): 
Jiwoong Park
Dates: 
Monday, April 10, 2017 - 4:30pm to 5:30pm

2D layered materials are like paper: they can be colored, stitched, stacked, and folded to form integrated devices with atomic thickness. In this talk, I will discuss how different 2D materials can be grown with distinct electrical and optical properties (coloring), how they can be connected laterally to form pattered circuits (stitching), and how their properties can be controlled by the interlayer rotation (twisting). We will then discuss how these atomically thin papers and circuits can be folded to generate active 3D systems.

2D Materials: Challenges and Opportunities for Future Electronics

Speaker(s): 
Robert Wallace
Dates: 
Friday, November 4, 2016 - 9:30am to 10:30am

The size reduction and economics of integrated circuits, captured since the 1960’s in the form of Moore’s Law, is under serious challenge. Current industry roadmaps reveal that physical limitations include reaching aspects associated with truly atomic dimensions, and the cost of manufacturing is reaching such values that only 2 or 3 companies can afford leading edge capabilities. To address the physical limitations, 2D materials such as graphene, phosphorene, h-BN, and transition metal dichalcogenides have captured the imagination of the electronics community...

CANCELLED: Tailoring Chemical and Optical Properties of 2D Transition Metal Dichalcogenides

Speaker(s): 
Talat S. Rahman
Dates: 
Friday, October 7, 2016 - 9:30am to 10:30am

Single-layer of molybdenum disulfide (MoS2) and other transition metal dichalcogenides (TMDC) appear to be promising materials for next generation applications (optoelectronic and catalysis), because of their low-dimensionality and intrinsic direct band-gap which typically lies in the visible spectrum. Several experimental groups have already reported novel electronic and transport properties which place these materials beyond graphene for device applications. MoS2 is also known to be a leading hydrodesulfurization catalyst. Efforts are underway to further tune...

New Nature Partner Journal: npj 2D Materials and Applications

  • By Aude Marjolin
  • 23 September 2016

npj 2D Materials and Applications is an online-only, open access journal that aims to become a top-tier interdisciplinary platform for scientists to share research on 2D materials and their applications. Part of the Nature Partner Journals series, npj 2D Materials and Applications is published in partnership with FCT NOVA, Lisbon, with the support of the European Materials Research Society (E-MRS).

In terms of policy making and impact, the journal responds to the pressing requirements of translating robust research based on this new class of materials into systems and devices that deliver sustainable solutions for a wide range of applications.

 

Electron-electron Interaction Physics in Two-dimensional Materials

Speaker(s): 
Allan MacDonald
Dates: 
Monday, October 17, 2016 - 4:30pm to 6:00pm

Two-dimensional (2D) materials are interesting in part because their electron density can be varied in situ by transferring charge from nearby metallic layers, and because 2D materials can be stacked in a wide variety of configurations to achieve quite different physics properties. My talk will explain several theoretically imagined examples of electron-electron interaction physics in 2D materials, some of which have already been realized experimentally. I will briefly discuss spatially-indirect exciton condensate superfluids in transition metal dichalcogenides...

Susan Fullerton Awarded NSF Grant Funds Study to Develop a Transistor Based on 2D Crystals

  • By Aude Marjolin
  • 19 May 2016

Sussan Fullerton received a $496,272 grant from the National Science Foundation to study two-dimensional semiconductors with the goal of demonstrating a switch that requires less power than conventional silicon-based transistors. 

As electronic devices continue to become more integrated into our daily lives, more energy is required to power these devices,” said Susan Fullerton, the principle investigator of the study. “On a large scale, decreasing the power requirements of electronics would impact global energy consumption.”

Department of Petroleum and Chemical Engineering, University of Pittsburgh
Ph.D., Chemical Engineering, Penn State University, 2009
Summary:

The mission of the Nanoionics and Electronics Laboratory, led by Susan Fullerton, is to establish a fundamental understanding of ion-electron transport at the molecular level, and use this knowledge to design next-generation electronic devices at the limit of scaling for memory, logic, and energy storage.

Her research focuses on the development of materials for low-power electronics and next-generation batteries. She is a co-PI in the Center for Low Energy Systems Technology ( LEAST ), one of six STARnet centers funded by the semiconductor research corporation (SRC) and DARPA. The goal of the center is to develop low-power transistors and memory using 2D materials that are only one atom or molecule thick.  Fullerton uses polymer electrolytes to enable the exploration of new regimes of transport in the 2D materials, with the goal of developing a transistor with an operating voltage lower than traditional CMOS.  

Fullerton also uses electrolytes for the development of a 2D flash memory that would shrink memory to the ultimate limit of scaling.  Her work on this project is funded by the NSF through their GOALI program:  Grant Opportunities of Academic Liaison with Industry.  The industrial partner is Micron Technology, Inc. - a global leader in memory technology.  Fullerton and her co-PI, Alan Seabaugh (U. of Notre Dame), combine their expertise in polymer physics and device physics, respectively, using ion transport to control electron transport in graphene - a single layer of carbon atoms.

Most Cited Publications
  1. "Effect of LiClO4 on the Structure and Mobility of PEO-Based Solid Polymer Electrolytes," Susan K. Fullerton-Shirey and Janna K. Maranas, Macromolecules 42, 2142 (2009)
  2. "Structure and Mobility of PEO/LiClO4 Solid Polymer Electrolytes Filled with Al2O3 Nanoparticles," Susan K. Fullerton-Shirey and Janna K. Maranas, J. Phys. Chem. C 114, 9196 (2010)
  3. "Reconfigurable Ion Gating of 2H-MoTe2 Field-Effect Transistors Using Poly(ethylene oxide)-CsClO4 Solid Polymer Electrolyte," Huilong Xu, Sara Fathipour, Erich W. Kinder, Alan C. Seabaugh, and Susan K. Fullerton-Shirey, ACS Nano 9, 4900 (2015)
  4. "2D materials advances: from large scale synthesis and controlled heterostructures to improved characterization techniques, defects and applications," Zhong Lin, Amber McCreary, Natalie Briggs, Shruti Subramanian, Kehao Zhang, Yifan Sun, Xufan Li, Nicholas J Borys , Hongtao Yuan, Susan K Fullerton-Shirey et al., 2D Mater. 3 042001 (2016)
  5. "Influence of Fe2O3 Nanofiller Shape on the Conductivity and Thermal Properties of Solid Polymer Electrolytes: Nanorods versus Nanospheres," Nhu Suong T. Do, Dean M. Schaetz, Barnali Dey, Alan C. Seabaugh, and Susan K. Fullerton-Shirey, J. Phys. Chem. C 116, 21216 (2012)
Recent Publications
  1. "Tuning the Electronic and Photonic Properties of Monolayer MoS2 via In Situ Rhenium Substitutional Doping, Kehao Zhang, Brian M. Bersch, Jaydeep Joshi, Rafik Addou, Christopher R. Cormier, Chenxi Zhang, Ke Xu, Natalie C. Briggs, Ke Wang, Shruti Subramanian, Kyeongjae Cho, Susan Fullerton-Shirey, Robert M. Wallace, Patrick M. Vora, and Joshua A. Robinson, Adv. Funct. Mater.,1706950 (2018)
  2. "Realizing Large-Scale, Electronic-Grade Two-Dimensional Semiconductors," Yu-Chuan Lin, Bhakti Jariwala, Brian M. Bersch, Ke Xu, Yifan Nie, Baoming Wang, Sarah M. Eichfeld, Xiaotian Zhang, Tanushree H. Choudhury, Yi Pan, Rafik Addou, Christopher M. Smyth, Jun Li, Kehao Zhang, M. Aman Haque, Stefan Fölsch, Randall M. Feenstra, Robert M. Wallace, Kyeongjae Cho, Susan K. Fullerton-Shirey, Joan M. Redwing, and Joshua A. Robinson, ACS Nano January 23, 2018
  3. "Deconvoluting the Photonic and Electronic Response of 2D Materials: The Case of MoS2," Kehao Zhang, Nicholas J. Borys, Brian M. Bersch, Ganesh R. Bhimanapati, Ke Xu, Baoming Wang, Ke Wang, Michael Labella,Teague A. Williams, Md Amanul. Haque, Edward S. Barnard, Susan Fullerton-Shirey, P. James Schuck, Joshua A. Robinson, Scientific Reports 7, Article number: 16938 (2017)
  4. "Properties of synthetic Epitaxial Graphene/Molybdenum Disulfide Lateral Heterostructures," Shruti Subramanian, Donna Deng†, Ke Xu, Nicholas Simonson, Ke Wang, Kehao Zhang, Jun Li, Randall Feenstra , Susan K. Fullerton-Shirey , Joshua A. Robinson, Carbon,125, 551 (2017)
  5. "Increasing the Room-Temperature Electric Double Layer Retention Time in Two-Dimensional Crystal FETs," Erich W. Kinder, Ashley Fuller, Yu-Chuan Lin, Joshua A. Robinson, and Susan K. Fullerton-ShireyACS Appl. Mater. Interfaces 9 , 25006 (2017) 
  6. "Uniform large-area growth of nanotemplated high-quality monolayer MoS2," Justin R. Young, Michael Chilcote, Matthew Barone, Jinsong Xu, Jyoti Katoch, Yunqiu Kelly Luo, Sara Mueller, Thaddeus J. Asel, Susan K. Fullerton-Shirey, Roland Kawakami, Jay A. Gupta, Leonard J. Brillson, and Ezekiel Johnston-Halperin, Appl. Phys. Lett. 110, 263103 (2017)

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