Semiconductors

Sergey Frolov Among 2017 Young Investigator Award Recipients

  • By Aude Marjolin •
  • 22 February 2017

The Office of Naval Research has announced awards of $16 million through its 2017 Young Investigator Program (YIP). The awards were made to 33 scientists whose research holds strong promise across several naval-relevant science and technology areas.

Sergey Frolov was among this year's Young Investigator Award recipients for his proposal "Semiconductor Nanowire-Based Quantum Emulators".

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Microsystems Technology Office-Wide Broad Agency Announcement

  • By Aude Marjolin •
  • 19 September 2016

MTO seeks to develop high-risk, high-reward technologies that create and prevent strategic surprise, help secure the Department of Defense's (DoD) technological superiority and address the complex threats facing U.S. national security. Proposed research should investigate innovative approaches that enable revolutionary advances in science, devices, or systems. Specifically excluded is research that primarily results in evolutionary improvements to the existing state of practice. 

Susan Fullerton Awarded NSF Grant Funds Study to Develop a Transistor Based on 2D Crystals

  • By Aude Marjolin •
  • 19 May 2016

Sussan Fullerton received a $496,272 grant from the National Science Foundation to study two-dimensional semiconductors with the goal of demonstrating a switch that requires less power than conventional silicon-based transistors. 

“As electronic devices continue to become more integrated into our daily lives, more energy is required to power these devices,” said Susan Fullerton, the principle investigator of the study. “On a large scale, decreasing the power requirements of electronics would impact global energy consumption.”

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Ultrafast Optical Measurements of Spin Polarization in Semiconductors

Fall 2016
Seminar
Spin polarization
Semiconductors
Speaker(s): 
Vanessa Sih
Dates: 
Monday, September 12, 2016 - 4:30pm

While both spin dynamics and electron orbital motion have been separately studied for many decades, we are just beginning to probe and understand the intricate phenomena that may be expected in the presence of spin-momentum coupling.  For example, it is still a mystery what the microscopic mechanism is that produces a bulk electron spin polarization in semiconductors in response to an applied accelerating electric field and how the electrical spin generation rate depends on material parameters.  Existing theories predict that the magnitude of this electrically-...

William Stanchina Receives MCSI Award

  • By Aude Marjolin •
  • 23 March 2016

The external advisory committee of the University of Pittsburgh’s Mascaro Center for Sustainable Innovation (MCSI) has awarded four faculty members with research seed grants totaling $190,630 for the 2016/2017 year.

This year’s recipients include PQI faculty William Stanchina for his proposal on "β- Ga2O3 Nanoelectronics: A Path to a Sustainable Semiconductor Technology for High Efficiency Electricity Conversion from Renewables."

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Department of Electrical and Computer Engineering, University of Pittsburgh
Ph.D., Electrical Engineering, University of Southern California, 1978
Summary:

Bill Stanchina is initiating a research program that investigates both the nano-scale potential and high temperature potential of wide bandgap heterostructure semiconductor devices and ICs. In addition to developing a fabrication capability utilizing the infrastructure available at the university, he is also establishing a device characterization laboratory for micro and nano-scale electronic devices in order to characterize their semiconductor device structure properties and to extract their equivalent circuit models.

Most Cited Publications
  1. "Maximum power point tracking using model reference adaptive control." Raghav Khanna, Qinhao Zhang, William E Stanchina, Gregory F Reed, Zhi-Hong Mao. IEEE Transactions on power Electronics.
  2. "100+ GHz static divide-by-2 circuit in InP-DHBT technology." Mehran Mokhtari, Chales Fields, Rajesh D Rajavel, Marko Sokolich, Joseph F Jensen, William E Stanchina. IEEE Journal of Solid-State Circuits.
  3. "39.5-GHz static frequency divider implemented in AlInAs/GaInAs HBT technology." JF Jensen, M Hafizi, WE Stanchina, RA Metzger, DB Rensch. GaAs IC Symposium Technical Digest 1992.
  4. "An InP-based HBT fab for high-speed digital, analog, mixed-signal, and optoelectronic ICs." WE Stanchina, JF Jensen, RH Walden, M Hafizi, H-C Sun, T Liu, C Raghavan, KE Elliott, M Kardos, AE Schmitz, YK Brown, ME Montes, M Yung. GaAs IC Symposium IEEE Gallium Arsenide Integrated Circuit Symposium 17th Annual Technical Digest 1995.
  5. "Effects of semiconducting and metallic single-walled carbon nanotubes on performance of bulk heterojunction organic solar cells." Liming Liu, William E Stanchina, Guangyong Li. Applied Physics Letters.
Recent Publications
  1. "An Analytical Model for Predicting Turn-on Overshoot in Normally-off GaN HEMTs." Joseph P Kozak, Ansel Barchowsky, Michael R Hontz, Naga Babu Koganti, William Stanchina, Gregory Reed, Zhi-Hong Mao, Raghav Khanna. IEEE Journal of Emerging and Selected Topics in Power Electronics.
  2. "A 2kW, High Power-Density (100W/in3), GaN-Based, Modular Multilevel Converter for Variable Speed Drive Applications in DC Systems." Ansel Barchowsky, Joseph P Kozak, Gregory F Reed, William E Stanchina, Brandon M Grainger. Naval Engineers Journal.
  3. "Sustainable IC design and fabrication." Donald Kline, Nikolas Parshook, Alex Johnson, James E Stine, William Stanchina, Erik Brunvand, Alex K Jones. 2017 Eighth International Green and Sustainable Computing Conference (IGSC).
  4. "Nanofabrication of β-Ga2O3nanowires for device implementation." John R Erickson, Susheng Tan, William E Stanchina. 2017 IEEE 17th International Conference on Nanotechnology (IEEE-NANO).
  5. "Analytical and experimental optimization of external gate resistance for safe rapid turn on of normally off GaN HFETs." Ansel Barchowsky, Joseph P Kozak, Michael R Hontz, William E Stanchina, Gregory F Reed, Zhi-Hong Mao, Raghav Khanna. 2017 IEEE Applied Power Electronics Conference and Exposition (APEC).
Department of Physics and Astronomy, University of Pittsburgh
Ph.D., Cornell, 1983
Summary:

Dr. Devaty's research focuses on the large bandgap semiconductors SiC, AlN, GaN and their alloys, heterostructures and superlattices. His interests include infrared reflectance, low temperature photoluminescence, magneto–optical spectroscopy, SiC Schottky barriers, carrier lifetime measurements, and shallow impurities and deep centers in SiC. In recent years porous SiC has been a topic of special interest. Potential applications include biosensors, bone tissue engineering, fuel cells, and substrates for defect reduction in epitaxial films. The group also participates in collaborations to investigate the oxide/SiC interface based on the large interfacial area of porous SiC and the propagation of bulk and surface acoustic waves in porous SiC.

We are primarily interested in the optical and electronic characterization of currently important large bandgap semiconductors such as AIN, GaN and SiC. Great emphasis in our research is placed on a close collaboration with the world`s most outstanding growers of single crystal boule material or single crystal epitaxial films. Most recently we have started to learn how to prepare and study single crystal porous SiC. Many new morphologies have been discovered in both n and p type SiC, and applications to medicine, gas sensing and fuel cells are being explored.

We study optical and electrical properties by a variety of techniques, and also put considerable effort into preparation of specialized samples. Regarding nanoscience and technology, examples of relevant work include the fabrication and investigation of porous SiC and investigations of polytype inclusions which behave as quantum wells.

We are also investigating SiC as a tool for nano-machining applications, as a substitute for diamond, towards applications for which diamond does not work well or at all.

Selected Publications: 
Most Cited Publications
  1. "Field effect in epitaxial graphene on a silicon carbide substrate," Gu, G., Nie, S., Feenstra, R.M., Devaty, R.P., Choyke, W.J., Chan, W.K., Kane, M.G, Applied Physics Letter, 90, 253507 (2007)
  2. "Penetration depths in the ultraviolet for 4H, 6H and 3C silicon carbide at seven common laser pumping wavelengths," Sridhara, S.G., Eperjesi, T.J., Devaty, R.P., Choyke, W.J., Materials Science and Engineering B 61-62 (1999)
  3. "Optical characterization of silicon carbide polytypes," Devaty, R.P., Choyke, W.J., Physica Status Solidi (A) Applied Research, 162, 5 (1997)
  4. "Absorption coefficient of 4H silicon carbide from 3900 to 3250 Å," S. G. Sridhara, R. P. Devaty, and W. J. Choyke, Journal of Applied Physics 84, 2963 (1998)
  5. "Photoluminescence and transport studies of boron in 4H SiC," Sridhara, S.G., Clemen, L.L., Devaty, R.P., Choyke, W.J., Larkin, D.J., King, H.S., Troffer, T., Pensl, G., Journal of Applied Physics 83, no. 12 (1998)
Recent Publications
  1. "Newly resolved phonon-assisted transitions and fine structure in the low temperature wavelength modulated absorption and photoluminescence spectra of 6H SiC," Klahold, W.M., Choyke, W.J., Devaty, R.P. (2019) Materials Science Forum, 963 MSF, pp. 341-345.
  2. "High resolution optical spectroscopy of free exciton and electronic band structure near the fundamental gap in 4H SiC." Klahold, W.M., Choyke, W.J., Devaty, R.P.     Materials Science Forum 924 MSF, pp. 239-244. (2018)
  3. "New evidence for the second conduction band in 4H SiC," Walter Klahold, Charles Tabachnick, Gabriel Freedman,  Robert P. Devaty , Wolfgang J. Choyke, Materials Science Forum, 897, 250 (2017)
  4. "Annealing of electron irradiated, thick, ultrapure 4H SiC between 1100°c and 1500°c and measurements of lifetime and photoluminescence," 
    Walter M. Klahold, Robert P. Devaty,  Wolfgang J. Choyke , Koutarou Kawahara, Tsunenobu Kimoto, Takeshi Ohshima, Materials Science Forum, 778, 273 (2014)
  5. Biocompatible Sol-Gel Based Nanostructured Hydroxyapatite Coatings on Nano-porous SiC (Book Chapter) Datta, M.K., Sipe, D.M., Ke, Y., (...), Campbell, P.G., Kumta, P.N. Silicon Carbide Biotechnology pp. 333-349
Department of Physics and Astronomy, University of Pittsburgh
Ph.D., Ohio State University, 1952
Summary:

We are primarily interested in the optical and electronic characterization of currently important large bandgap semiconductors such as AIN, GaN and SiC. Great emphasis in our research is placed on a close collaboration with the world`s most outstanding growers of single crystal boule material or single crystal epitaxial films. Most recently we have started to learn how to prepare and study single crystal porous SiC. Many new morphologies have been discovered in both n and p type SiC, and applications to medicine, gas sensing and fuel cells are being explored.

We study optical and electrical properties by a variety of techniques, and also put considerable effort into preparation of specialized samples. Regarding nanoscience and technology, examples of relevant work include the fabrication and investigation of porous SiC and investigations of polytype inclusions which behave as quantum wells.

We are also investigating SiC as a tool for nano-machining applications, as a substitute for diamond, towards applications for which diamond does not work well or at all.

Selected Publications: 
  • "Determination of the phonon dispersion of zinc blende (3C) silicon carbide by inelastic x-ray scattering," J. Serrano, J.Strempfer, M. Cardona, M. Schwoerer-Böhning, H. Requardt, M. Lorenzen. B. Stojetz, P. Pavaone and W.J.Choyke, Appl. Phys. Lett. V80, 4360, (2002)
  • "Determination of the electric field in 4H/3C/4H quantum wells due to spontaneous polarization in the 4H SiC matrix," S. Bai, R.P. Devaty, W.J. Choyke, U. Kaiser, G. Wagner, and M.F. MacMillan, Appl. Phys. Lett. V83, 3171, (2003)
  • "Identification of the Carbon Dangling Bond Center at the 4H/-SiC/SiO2 Interface by an EPR Study in Oxidized Porous SiC," J.L. Cantin, H.J. von Bardeleben, Y. Shishkin, Y.Ke, R.P. Devaty and W.J.Choyke, Phys. Rev. Lett. V92, 015502-1, (2004)
  • "Photoelectrochemical etching of n-type 4H Silicon Carbide," Y. Shishkin, W.J. Choyke and R.P. Devaty, Jour. Appl. Phys. V96, 3311, (2004)
Most Cited Publications
  1. "Phonon dispersion curves by raman scattering in SiC, polytypes 3C, 4H, 6H, 15R, and 21R," Feldman, D.W., Parker, J.H., Choyke, W.J., Patrick, L., Physical Review 173, no. 3 (1968)
  2. "Deep defect centers in silicon carbide monitored with deep level ransient spectroscopy," Dalibor, T., Pensl, G., Matsunami, H., Kimoto, T., Choyke, W.J., Schoner, A., Nordell, N., Physica Status Solidi (A) Applied Research 162, no. 1 (1997)
  3. "An investigation of the properties of cubic CaN grown on GaAs by plasma-assistied molecular-beam epitaxy," Strite, S., Ruan, J., Li, Z., Salvador, A., Chen, H., Smith, D.J., Choyke, W.J., Morkoc, H., Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures 9, no. 4 (1991)
  4. "Electrical and optical characterization of SiC," Pensl, G., Choyke, W.J., Physica B: Physics of Condensed Matter 185, no. 1-4 (1993)
  5. "Comparative electron spectroscopic studies of surface segregation on SiC(0001) and SiC(000-1)," Muehlhoff, L., Choyke, W.J., Bozack, M.J., Yates Jr., J.T., Journal of Applied Physics 60, no. 8 (1986)
Recent Publications
  1. "Newly resolved phonon-assisted transitions and fine structure in the low temperature wavelength modulated absorption and photoluminescence spectra of 6H SiC," Klahold, W.M., Choyke, W.J., Devaty, R.P. (2019) Materials Science Forum, 963 MSF, pp. 341-345.
  2. "High resolution optical spectroscopy of free exciton and electronic band structure near the fundamental gap in 4H SiC." Klahold, W.M., Choyke, W.J., Devaty, R.P.     Materials Science Forum 924 MSF, pp. 239-244. (2018).
  3. "HIGH ENERGY ION BOMBARDMENT SIMULATION FACILITY AT THE UNIVERSITY OF PITTSBURGH." PITTSBURGH.McGruer, J.N., Choyke, W.J., Doyle, N.J., Spitznagel, J.A.
  4. "New evidence for the second conduction band in 4H SiC."     Klahold, W., Tabachnick, C., Freedman, G., Devaty, R.P., Choyke, W.J.     Materials Science Forum 897 MSF, pp. 250-253. (2017).
  5. "Annealing of electron irradiated, thick, ultrapure 4H SiC between 1100°c and 1500°c and measurements of lifetime and photoluminescence." Klahold, W.M., Devaty, R.P., Choyke, W.J., (...), Kimoto, T., Ohshima, T.     Materials Science Forum 778-780, pp. 273-276. (2014).

IBM SRC Robert H. Dennard Fellowship

  • By Aude Marjolin •
  • 20 January 2015

The Semiconductor Research Corporation (SRC) is pleased to announce the competition for the IBM SRC Robert H. Dennard Fellowship.

This award has been established to honor the life and work of Dr. Dennard and his impact on the semiconductor industry over the last 57 years, all while working at IBM. The fellowship is open to all doctoral students with a focus on Device or Design System and at least one year of doctoral study. This student will engage with IBM researchers and IBM relevant research while pursuing their PhD, receive full tuition and fees for up to for three years (36 mos) in a US university with a possible extension of one year (12 mos) and a monthly stipend. The fellowship will begin fall 2015

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