PQI2016 Huili Grace Xing: Progress Toward Thin-TFET: a 2D Material Based Transistor

In her talk, Grace Xing (Cornell University) describes the recent progress accomplished in her group in the field of 2D materials towards the fabrication of Thin-Tunneling Field-Effect Transistor (TFET) devices, where Thin stands for Two-dimensional Heterojunction Interlayer Tunnel.

Indeed, she describes how the group has been able to observe a 40 mV/decade subthreshold slope in 2D materials, which is an experimental first.