PQI2016 Randy Feenstra: Tunneling Devices Based on TMD Materials

Randy Feenstra (CMU) discusses the use of both first-principles computational methods and low-energy electron microscopy in the investigation of two-dimensional transition-metal dichalcogenide materials as potential candidates for interlayer tunneling devices.
He uses the former to realistically estimate the values of tunneling currents and the latter to characterize the layers. He discusses as well the progress towards fabricating a full interlayer tunneling device.