In the recently published paper in Journal of Nanoscale, Randall M. Feenstra and their colleagues have demonstrated the importance of 2D layer thickness and transition metal dichalcogenide (TMD) in the transport properties of the hybrid structure, where monolayer TMDs exhibit direct tunneling through the layer, while transport in few layer TMDs on GaN is dominated by p–n diode behavior and varies with the 2D/3D hybrid structure. They have shown the scalable synthesis of molybdenum disulfide (MoS2) and tungsten diselenide (WSe2) via metal organic chemical vapor deposition (MOCVD) on gallium nitride (GaN), and elucidated the structure, chemistry, and vertical transport properties of the 2D/3D hybrid.
Two and three-dimensional (2D/3D) hybrid materials
Direct conversion of unsubstituted furan into benz
4D quantum Hall physics
Superior stability of a-C:H:Si:O
Photonic and Electronic Performance of MoS2
Dislocation nucleation via atomic segregation
Plasmon excitation, dephasing and hot electron
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